Advanced Lithography Technology Insights
Explore the latest advancements in lithography technology including Extreme Ultraviolet (EUV), pitch nodes, Optical Proximity Correction (OPC) masks, optics, reticles, and more. Learn about EUV's impact on pitch sizes, photoresist aspect ratios, and equipment complexity.
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Presentation Transcript
EUV 1
Half pitch Half pitch [2] ?????=??? ?? ??: The system constant ? : The wavelength of the light (EUV:13.5nm) NA : Numerical Aperture(? ????) (EUV:0.33 ) [1] ????? : half pitch P pitch L lines S spaces Reference:[1]:ASML ADT [2]:Applied Materials 2
Pitch node of EUV Pitch node of EUV aspect ratio of photoresist 40nm 40nm 38nm 193nm 12nm EUV CAR : chemically amplified resist Reference : ASML/IMEC 3
ArF 193nm vs EUV OPC mask Optical proximity correction mask NXE 3400 4 Reference : ASML
ArF 193nm vs EUV Half pitch < 38nm Reference: ASML 5 Half pitch about 19nm Half pitch : 13nm
EUV Generation in LPP Pre-Pulse Main Pulse Reference : ASML 6
Collector lifetime Collector power > 200W NXE 3400 NXE 33x0 NXE 3400 has longer collector lifetime than NXE 33x0 Reference : ASML 7
EUV Optics mask Tin droplet ??? Laser All optics is based on mirrors(no suitable lens for 13.5nm) About x0.69 power left for each mirror (1.6% through all optics) Number of mirrors in projection optics NA 8 Reference : Applied Materials
EUV Reticle (mask) 9 Reference : ASML
EUV wph : wafer per hour Advantage Disadvantage Half pitch 13nm(193nm : 38nm) Equipment is very expensive Process steps Power consumption Cycle time New mask Process complexity New photoresist IC performance Clean for collector & mask 10
