Asymmetric Layout 60GHz Mixer with LO Leakage Suppression

Characterization of a 60GHz up-conversion mixer utilizing asymmetric layout for LO leakage suppression and RF-LO isolation enhancement. The design aims for high-speed wireless communication applications, focusing on minimizing LO leakage through DC mismatch calibration and double-balanced mixer topology.

• 60GHz Mixer
• LO Leakage
• RF-LO Isolation
• Wireless Communication
• Mixer Topology

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1. A 60GHz up-conversion mixer using asymmetric layout with -41.1dBc LO leakage Yuki Tsukui, Kenichi Okada and Akira Matsuzawa Tokyo Institute of Technology, Japan Matsuzawa Lab. Tokyo Institute of Technology Tokyo Institute of Technology Matsuzawa Lab. Matsuzawa & Okada Lab. & Okada Lab. Matsuzawa

2. Outline 1 Background Mixer topology Asymmetric layout Measurement results Conclusion Matsuzawa Lab. Tokyo Institute of Technology Tokyo Institute of Technology Matsuzawa Lab. Matsuzawa & Okada Lab. & Okada Lab. Matsuzawa

3. Background Characterization of 60GHz 2 Attenuation is large. Wide bandwidth can be used without license. Suitable for short range and very high-speed wireless communication High-speed file/data transfer IEEE 802.15.3c Bandwidth 2.16GHz QPSK 3.5Gbps 16QAM 7.0Gbps 4ch 4ch 4ch Matsuzawa Lab. Tokyo Institute of Technology Tokyo Institute of Technology Matsuzawa Lab. Matsuzawa & Okada Lab. & Okada Lab. Matsuzawa

4. Object 3 RF-LO isolation LO leakage Mixer LO leakage The degradation of EVM RF-LO isolation Pulling Smaller LO leakage and RF-LO isolation Matsuzawa Lab. Tokyo Institute of Technology Tokyo Institute of Technology Matsuzawa Lab. Matsuzawa & Okada Lab. & Okada Lab. Matsuzawa

5. 60GHz Mixer 4 Generally, switching mixers for RF circuits are used. Parasitic capacitances causes large LO leakage and RF-LO isolation. Matsuzawa Lab. Tokyo Institute of Technology Tokyo Institute of Technology Matsuzawa Lab. Matsuzawa & Okada Lab. & Okada Lab. Matsuzawa

6. Double-balanced mixer 5 This topology can cancel LO signal to RF port and RF signal to LO port. By DC and capacitance mismatch, LO leakage and RF-LO isolation is larger. Matsuzawa Lab. Tokyo Institute of Technology Tokyo Institute of Technology Matsuzawa Lab. Matsuzawa & Okada Lab. & Okada Lab. Matsuzawa

7. DC mismatch 6 0 ?????? = ???????????????? -10 [dBc] [dBc] LO leak [dBc] ??? -20 -30 -40 -50 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 DC mismatch [mV] Vthvariation causes DC mismatch. Larger DC mismatch, Larger LO leakage. DC mismatch calibration Matsuzawa Lab. Tokyo Institute of Technology Tokyo Institute of Technology Matsuzawa Lab. Matsuzawa Matsuzawa & Okada Lab. & Okada Lab.

8. Cgdmismatch 7 -30 RF-LO isolation [dB] -40 -50 -60 -70 -80 -90 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Capacitance mismatch [fF] Layout causes capacitance mismatch. Larger Cgdmismatch, Larger LO leakage and RF-LO isolation. Asymmetric layout Matsuzawa Lab. Tokyo Institute of Technology Tokyo Institute of Technology Matsuzawa Lab. Matsuzawa & Okada Lab. & Okada Lab. Matsuzawa

9. Asymmetric layout 8 Mixer core excluding intersection LO line and RF line cross in matching network Mixer core including intersection bad symmetrical property RF+ RF+ LO+ LO- LO+ LO- RF- RF- Asymmetrical core (Good) Symmetrical core (Not Good) Matsuzawa Lab. Tokyo Institute of Technology Tokyo Institute of Technology Matsuzawa Lab. Matsuzawa & Okada Lab. & Okada Lab. Matsuzawa

10. Asymmetric layout 9 Symmetrical core needs crossed and complicated matching network. Asymmetrical core can realize simple matching network. RF+ BB+ BB- BB+ BB- RF+ LO+ LO- RF- RF- Asymmetrical core LO- LO+ Symmetrical core Matsuzawa Lab. Matsuzawa Lab. Tokyo Institute of Technology Tokyo Institute of Technology Matsuzawa & Okada Lab. & Okada Lab. Matsuzawa

11. Schematic 10 Active mixer Large CG Matsuzawa Lab. Tokyo Institute of Technology Tokyo Institute of Technology Matsuzawa Lab. Matsuzawa & Okada Lab. & Okada Lab. Matsuzawa

12. Die photo 11 Area of mixer core : 160 50[ m2] Matsuzawa Lab. Tokyo Institute of Technology Tokyo Institute of Technology Matsuzawa Lab. Matsuzawa & Okada Lab. & Okada Lab. Matsuzawa

13. RF-LO isolation 12 RF-LO isolation is measured using network analyzer. RF-LO isolation @ 60GHz : -37.3dBc Matsuzawa Lab. Tokyo Institute of Technology Tokyo Institute of Technology Matsuzawa Lab. Matsuzawa & Okada Lab. & Okada Lab. Matsuzawa

14. Measurement system 13 BB and LO input : Signal generator RF output : Spectrum analyzer Matsuzawa Lab. Tokyo Institute of Technology Tokyo Institute of Technology Matsuzawa Lab. Matsuzawa & Okada Lab. & Okada Lab. Matsuzawa

15. Conversion gain 14 BB frequency : 100MHz LO frequency : 62.64GHz Matsuzawa Lab. Tokyo Institute of Technology Tokyo Institute of Technology Matsuzawa Lab. Matsuzawa & Okada Lab. & Okada Lab. Matsuzawa

16. LO leakage 15 DC mismatch calibration VgBBon one side is fixed to 0.5V. LO leakage : -41.1dBc Matsuzawa Lab. Tokyo Institute of Technology Tokyo Institute of Technology Matsuzawa Lab. Matsuzawa & Okada Lab. & Okada Lab. Matsuzawa

17. Performance comparison 16 Up-conversion mixer Technology This work [1] [2] 65nm 130nm 90nm Conversion gain [dB] RF-LO Isolation [dB] LO leakage [dBc] 4.3 4.0 4.5 -37.3 -37 -57.5 -41.1 -30 N/A Power consumption [mW] 5.4 24.0 15.1 [1] F. Zhang, et al., Electronics Letters, 2012 [2] T. Tsai, et al., Electronics Letters, 2012 Matsuzawa Lab. Tokyo Institute of Technology Tokyo Institute of Technology Matsuzawa Lab. Matsuzawa & Okada Lab. & Okada Lab. Matsuzawa

18. Conclusions 17 Up-conversion mixer using asymmetric layout is presented. The mixer in 65nm CMOS achieved conversion gain isolation of -37.3dB, LO leakage of -41.1dBc and power consumption of 5.4mW. of 4.3dB, RF-LO Matsuzawa Lab. Tokyo Institute of Technology Tokyo Institute of Technology Matsuzawa Lab. Matsuzawa & Okada Lab. & Okada Lab. Matsuzawa

19. 18 Matsuzawa Lab. Tokyo Institute of Technology Tokyo Institute of Technology Matsuzawa Lab. Matsuzawa & Okada Lab. & Okada Lab. Matsuzawa

20. Impedance 19 RF port LO port Solid line: measurement, Dotted line: simulation Markers show 60GHz point. The difference between simulation and measurement is due to parasitic inductance. Matsuzawa Lab. Tokyo Institute of Technology Tokyo Institute of Technology Matsuzawa Lab. Matsuzawa & Okada Lab. & Okada Lab. Matsuzawa

21. Large-signal characteristics 20 P1dB : -8.7dBm Psat: -5.2dBm Matsuzawa Lab. Tokyo Institute of Technology Tokyo Institute of Technology Matsuzawa Lab. Matsuzawa & Okada Lab. & Okada Lab. Matsuzawa