Circuit Design Problems for Exam Preparation

review problems n.w
1 / 4
Embed
Share

Practice solving CMOS circuit design problems for an upcoming exam. Determine values for VDD, RD, W/L ratios, logic functions, and transistor configurations. Enhance your understanding of CMOS circuits through these challenging exercises.

  • Circuit Design
  • CMOS
  • Exam Preparation
  • Transistors
  • Logic Functions

Uploaded on | 0 Views


Download Presentation

Please find below an Image/Link to download the presentation.

The content on the website is provided AS IS for your information and personal use only. It may not be sold, licensed, or shared on other websites without obtaining consent from the author. If you encounter any issues during the download, it is possible that the publisher has removed the file from their server.

You are allowed to download the files provided on this website for personal or commercial use, subject to the condition that they are used lawfully. All files are the property of their respective owners.

The content on the website is provided AS IS for your information and personal use only. It may not be sold, licensed, or shared on other websites without obtaining consent from the author.

E N D

Presentation Transcript


  1. Review problems Exam 1

  2. Problem 1 For the following circuit, specify the required values of VDD, RD and W=L such that: high and low output voltages equal to VOH = 2V and VOL = 0.1V , respectively, are obtained, and so that the current drain from the supply in the low-output state is 20mA. The transistor has Vt = 0.5V and unCox= 100A/V2

  3. Problem 2 The pull-down (PD) network for a complex CMOS gate is shown below. Determine (i) the logic function, (ii) the graph diagram that correspond to the PD network, (iii) the graph diagram that correspond to the pull-up network needed to implement the logic function, and (iv) the (W=L) ratios for all NMOS and PMOS transistors if the circuit is based on the reference inverter with (W/L)n = 2/1 and (W=L)p = 5/1.

  4. Problem 3 Consider a matched CMOS inverter fabricated in the 0.13um process for which Vtn=-Vtp= 0.5V, VDD= 1.8V, upCox=unCox=300uA/V2. If the load capacitance C = 20fF, use the method of average currents to determine the required (W/L) ratios so that tp=20ps.

Related


More Related Content