Improving 3D NAND Flash Memory Device Reliability with HeatWatch
"HeatWatch presents a groundbreaking approach to enhancing the reliability of 3D NAND flash memory devices through self-recovery mechanisms and temperature awareness. With a focus on reducing retention loss and program variation, this research offers significant improvements in flash lifetime and performance. Learn about the key contributions and impact of HeatWatch in this innovative study. Download the paper for detailed insights."
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Presentation Transcript
HeatWatch: Improving 3D NAND Flash Memory Device Reliability by Exploiting Self-Recovery and Temperature Awareness Yixin Luo Saugata Ghose Yu Cai Erich F. Haratsch Onur Mutlu
NAND Flash Memory Higher Voltage State Data Value = 0 Flash Cell Read Reference Voltage Lower Voltage State Data Value = 1
Flash Reliability and Lifetime Factor 1. Retention Loss Speed 2. Program variation Physical Phenomenon Self-Recovery Effect Temperature Effect
Our Contributions 3D NAND Flash Characterization Self-recovery slows down retention loss by: 40% 21% First experimental characterization High temperature increases program variation by: Real 3D NAND chips URT Model A new comprehensive model that unifies 4 most significant effects that affect flash reliability Prediction error rate: 4.9% HeatWatch Improves flash lifetime by: 3.85x Memory/Storage overhead: <1.6MB A new mechanism that adapts read reference voltage to access pattern and temperature
HeatWatch: Improving 3D NAND Flash Memory Device Reliability by Exploiting Self-Recovery and Temperature Awareness Session 6A Tuesday 11:20 AM Yixin Luo Saugata Ghose Yu Cai Erich F. Haratsch Onur Mutlu Paper download link: http://yixinluo.com/index_files/ heatwatch_hpca18.pdf
