Innovative Studies on InGaAs for Optoelectronics Applications

InGaAs (Indium Gallium Arsenide) Name : Nor Haakimah bt Mat Hussin 1140713

InGaAs is composed of three chemical elements, arsenic, gallium and indium. widely used in optoelectronics technology. indium and gallium play similar roles in chemical bonding Ga and In belong to Group III of the Periodic Table arsenic belong to Group V These binary materials and their alloys are all III-V compound semiconductors. .

Extraction of second harmonic from the ???.?????.???? planar Gunn diode using radial stub resonators by Mohamed Ismaeel Maricar , A. Khalid , J. Glover , G.A. Evans, P. Vasileious, Chong Li ,D. Cumming, C.H. Oxley in 2014 Propose the planar Gunn diodes. It is designed in coplanar waveguide (CPW) format with an active channel length and width integrated to CPW matching circuit and radial stub resonator. In this paper, present a novel method to extract the second harmonic from the planar Gunn diode by using CPW matching elements and a radial stub resonator. The work was carried out using ??0.53??0.47?? Gunn diode on anIndium Phosphide ??? substrate. Planar Indium Gallium Arsenide (??????) Gunn diodes with on chip matching circuits have been fabricated on a semi-insulating I?? substrate to enable the extraction of the second harmonic in millimeter-wave and terahertz frequencies. The paper describes an ??0.53??0.47?? based planar Gunn diode fabricated on an InP semi-insulating substrate with an integrated matching circuit to extract the second harmonic.

Modification of metalInGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin ??? ?? interlayer. by Chauhan, Suman Gupta, Piyush Jaiswal, Navakanta Bhat, S.A. Shivashankar, G. Hughes Porpose solution to metal oxide semiconductor field effect transistor (MOSFET). The fabrication is relatively high source/drain contact resistance which results from poor dopant activation in III V semiconductors. This problem is to fabricate metal S/D Schottky-barrier MOSFET devices which requires control over the barrier height at the metal InGaAs interface. It has recently been reported that the insertion of an ultrathin dielectric layer at the interface between the metal and the InGaAs surface can help in releasing the Fermi level to obtain a rectifying contact. Inserting ultra-thin atomic layer deposited Al2 O3 dielectric layers on the Schottky barrier behaviour on n and p-doped InGaAs substrates has been investigated. Rectifying behaviour was observed for the p-type substrates for both the Al/p InGaAs and Al/Al2 O3/p InGaAs contacts. The Pt contacts directly deposited on p InGaAs displayed evidence of limited rectification which increased with Al2 O3 interlayer thickness

Properties of InGaAs/GaAs metal oxide semiconductor heterostructure field effect transistors modified by surface treatmen by D. Gregu sov a F. Gucmann R. K udela M. Mi cu s k R.Stoklas L. Valik J. Gregu s M. Blaho P. Kordo s This paper focused on which insulator should be the most appropriate for the stack and how the underlying semiconductor surface should be prepared. GaAs and other III-Vs do not have such a formidable native oxide compared with Si. Their oxides do not show electrical properties that would match those of SiO2, and their interfaces with III-Vs do not reach the quality of Si/SiO2 interface that exhibits a low degree of charge traps. densities in GaAs. In such efforts trap densities are effectively reduced when native oxides of GaAs are removed and replaced with a more favorable material. In this proposol applied a combination of passivation and oxidation in the processing of a GaAs based MOSHFET with an InGaAs channel. Aluminum oxide as a gate insulator was formed by the room temperature air-assisted oxidation of a thin Al layer prepared in situ by MOCVD on a GaAs cap layer. Various techniques were developed in order to lower such trap state

MOVPE growth of (GaIn)As/Ga(AsSb)/(GaIn)As type-II heterostructures on GaAs substrate for near infrared laser applications by C. Fuchs, A. Beyer, K. Volz, W. Stolz. Novel GaAs-based type-I material systems were suggested for more efficient telecommunications systems at 1300 nm. The Auger losses are a limiting factor in terms of the performance of type-I laser systems.Then, type-II laser systems were suggested in order to improve device performances at even longer emission wavelengths. A possible materials combination that exhibits a type-II band alignment consists of (GaIn)As as electron QW material and Ga(AsSb) as hole QW material. power per facet at a wavelength of 1170 nm under pulsed excitation conditions. The growth of high quality (GaIn) As/Ga (AsSb) /(GaIn)As W - quantum well heterostructures is discussed with respect to their application in 1300 nm laser devices. By altering the group-V gas phase ratio, it is possible to cover a large spectral range between 1200 nm and 1470 nm using a growth temperature of 550 C and a V/III ratio of 7.5. A comparison of a sample with a photoluminescence emission wavelength at 1360 nm with single quantum well material reference samples proves the type-II character of the emission. The performance of these devices was limited to 140 mW output

In 2016, Wenyuan Liu, Mahasin Alam Sk, Sergei Manzhos, Ignacio Martin- Bragado, Francis Benistant, Siew Ann Cheong propose a more comprehensive model in their paper Grown-in beryllium diffusion in indium gallium arsenide: An ab initio,continuum theory and kinetic Monte Carlo study . In this paper, taking self-interstitial migration and ?? interaction with ?? and In into account. In this work, a physically motivated multiscale modeling of grow-in Be diffusion in ?????? has been presented. In order to evaluate the importance of different diffusion mechanisms, the reaction energies and elementary diffusion processes in Be-doped ??0.50??0.50?? using DFT are investigated. higher than for the kick-out mechanism. In contrast, the roles of ?? and In are found to be different in the kick-out reactions, specifically, kicking out of ?? is an exothermic reaction while kicking out of ?? is endothermic. The ab initio simulations also provided physically motivated parameters which served as input for the continuum and KMC simulations. Continuum modeling indicated that different charge states of ?? and ?? interstitials are contributing to the diffusion mechanism at different temperatures and both continuum and KMC simulations agree well with experimental results. The energy barrier for Frank-Turnbull mechanism was found to be much

(GaIn)(NAs) growth using di-tertiary-butyl-arsanoamine (DTBAA) authored by E. Sterzer, B. Ringler, L. Nattermann, A. Beyer, C. von H nisch, W. Stolz, K. Volz in 2016 (GaIn)(NAs) growth studies with the novel precursor di-tertiary- butylarsano-amine in combination with tri-ethyl-gallium and tri- methyl-indium. The conventionally used N precursor 1,1-dimethylhydrazine (UDMHy) has an extremely low N incorporation efficiency in GaAs when grown using metal organic vapor phase epitaxy. Alloying Ga(NAs) with Indium (In) also leads to an exponential reduction of N incorporation. The huge amount of UDMHy in turn changes drastically the growth conditions. Furthermore, the application of this material is still hampered by the large carbon incorporation, most probably originating from the metal organic precursors.

Titl e Extraction of second harmonic from the ??0.53??0.47?? planar Gunn diode using radial stub resonators.(2 014) Modification of metal InGaAs Schottky barrier behaviour by atomic layer deposition of ultra-thin ??2 ?3 interlayers.(2014 ) Properties of InGaAs/GaAs metal oxide semiconductor heterostructure field effect transistors modified by surface treatment.(2016) MOVPE growth of (GaIn)As/Ga(AsSb)/ (GaIn)As type-II heterostructures on GaAs substrate for near infrared laser applications(2016) Grown-in beryllium diffusion in indium gallium arsenide: An ab initio, continuum theory and kinetic Monte Carlo study.(2016) (GaIn)(NAs) growth using di-tertiary- butyl- arsanoamine (DTBAA) 1.??? 2.Gunn diode 3.???? 1. ?? 2. Schottky barrier 3. Al/p-InGaAs 4. Al/??2 ?3 /p- InGaAs contacts 5. ??2 ?3 1. ???? 2.(????)?? 3.??(????) 4.(????)?? 1. ?????? 2. ?? 3. ?? Ma t- eria l 1. (001) GaAs 2. ?3 ??4:?2?2:?2? (f or mesa-isolation) 3.??: ?2? (to remove undesired native oxides) 4. Ni/AuGe/Ni/Au2O 5. N2+H2 (for thermal annealing) 1. (GaIn)(NAs) 2. DTBAA 3. Nitrogen (N) 4. In 4.Sb.

Re- su- lts W band The measured RF loss of the mixer was -50 dB over an extended W band to 125 GHz the same surface treatments, a low barrier height is observed on the Pt/p- InGaAs junctions, irrespective of presence of the ??2 ?3 interlayer or sulphur passivation. The V/III ratio does not show a significant influence on the optoelectronic quality in case of samples grown at 550 C. 1. kicking out of ?? is an exothermic reaction while kicking out of ?? endothermic 1.The N incorporatio n efficiency with DTBAA even higher for (GaIn)(NAs) growth than for Ga(NAs) growth The presence of an AlOx layer reflected in a reduced gate leakage current. is V-band The measured RF loss of the mixer at 60 GHz was -50 dB