MOSFET I-V Data & Long-Channel Equations for ALD1107 Quad-Matched Device Chip
Explore MOSFET I-V data, long-channel equations, square-root of ID at VDS, ID vs. VDS, ID vs. VGS at VDS, and subthreshold behavior for the ALD1107 p-channel device in a 1-micron process. Understand the characteristics and performance of this specific MOSFET device.
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Presentation Transcript
MOSFET I-V Data P-Channel device from an ALD1107 Quad matched device chip. Process approximately L = 1 m.
Long-channel Equations ( ) q V V GS n kT TH exp if I V V S GS TH st ( ) ( ) + + 1 a V V a W L ( ) = 1+ V GS TH if I C V V V V V ( ) DS DS OX GS TH DS DS DS 2 1 ( ) ( ) 2 + V V + V V a ( ) GS TH a GS TH 1+ V if V ( ) DS DS 2(1 ) 1 Usually assume a = 0 q if I V V DS GS TH n kT I st I = = DS g m 2 GSV V ( ) if 0 DS V V V V ( ) DS DS GS TH V GS TH
Square-Root of ID at VDS = -5.0 volts - Finding Threshold 0.03 0.025 0.02 Square Root of ID Square Root of ID 0.015 0.01 0.005 VTH =- .72 0 -3.50E+00 -3.00E+00 -2.50E+00 -2.00E+00 -1.50E+00 -1.00E+00 -5.00E-01 0.00E+00 VGS (volts)
3.00E-04 2.50E-04 2.00E-04 ID (amperes) 1.50E-04 VGS = -2.1 V Fit a > 0 Fit a = 0 1.00E-04 5.00E-05 0.00E+00 -6.00E+00 -5.00E+00 -4.00E+00 -3.00E+00 VDS (volts) -2.00E+00 -1.00E+00 0.00E+00
ID vs. VDS for ALD1107 MOSFET 1.20E-03 VGS = -1.0 VGS = -1.3 VGS = -1.6 VGS = -1.9 1.00E-03 VGS = -2.2 VGS = -2.5 VGS = -2.8 VGS = -3.1 8.00E-04 VGS = -3.4 VGS = -3.7 VGS = -4.1 6.00E-04 4.00E-04 2.00E-04 0.00E+00 -5.00E+00 -4.50E+00 -4.00E+00 -3.50E+00 -3.00E+00 -2.50E+00 -2.00E+00 -1.50E+00 -1.00E+00 -5.00E-01 0.00E+00
ID versus VGS at VDS = -4.0 Volts - Subthreshold Logarithmic Behavior 1.00E-03 1.00E-04 Ideality factor n = 1.41 1.00E-05 1.00E-06 ID (amperes) 1.00E-07 1.00E-08 1.00E-09 VTH =- .72 V. 1.00E-10 1.00E-11 -2.0 -1.9 -1.8 -1.7 -1.6 -1.5 -1.4 -1.3 -1.2 -1.1 VGS (volts) -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0.0
