Nonlocal Transistor Based on Pure Crossed Andreev Reflection in a EuO-Graphene/Superconductor Device
Explore the intriguing concept of a nonlocal transistor based on pure crossed Andreev reflection in a EuO-Graphene/Superconductor device. This innovative technology holds promise for applications in fundamental physics, spintronics, and solid-state quantum computing, with potential implications for Cooper pair splitters and Bell's theorem. Dive into the research presented in Poster 70 at the intersection of superconductors, normal materials, and Andreev reflection for insights into the future of quantum technologies.
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Presentation Transcript
Nonlocal Transistor Based on Pure Crossed Andreev Reflection in a EuO-Graphene/Superconductor Device Yee Sin Ang, L. K. Ang, Chao Zhang, Zhongshui Ma POSTER 70
Superconductor Superconductor Normal Normal Normal Crossed Andreev reflection Local Andreev reflection A. F. Andreev, J. Expt. Theor. Phys. 19, 1228 (1964) Potentials of Crossed Andreev Reflection Cooper pair splitter Probe fundamental physics Bell s theorem Spintronics Building block of solid-state quantum computing S J. M. Byers et al, Phys. Rev. Lett. 74, 306 (1995) E. Prada et al, Eur. Phys. J. B 40, 379 (2004) Cooper pair splitter
Dirac point blocking Bandgap blocking Challenges: Requires precise tuning of Fermi levels and bais voltage EC EC X X X ??= ?? ??= ?? X AR ??= ? ??= ? ?? = ? AR CAR CAR S S J. Cayssol, Phys. Rev. Lett. 100, 147001 (2008) M. Veldhorst et al, Phys. Rev. Lett. 105, 107002 (2010) Semiconductor Graphene Pure crossed Andreev reflection in a spin-split and gapped energy dispersion Y. S. Ang et al, Phys. Rev. B93, 041422(R) (2016)
Poster 70 Nonlocal Transistor Based on Pure Crossed Andreev Reflection in a EuO-Graphene/Superconductor Device
