Schottky MOSFET Fabrication and Characterization Process
Explore the fabrication and characterization process of Schottky MOSFETs, including using Buffered Oxide Etchant (BOE) and the associated safety precautions. Learn about etching techniques, observation methods, and measurement procedures for this semiconductor device.
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Presentation Transcript
Fabrication and Characterization Fabrication and Characterization of Schottky MOSFETs of Schottky MOSFETs BOE Etching Group 8 B10901095 B09901096
Process flow Process flow
BOE ( Buffered Oxide Etchant )/BHF BOE ( Buffered Oxide Etchant )/BHF Acute toxicity, Oral Acute toxicity, Inhalation Acute toxicity, Dermal Skin corrosion Serious eye damage Corrosive to Metals Target Organ Systemic Toxicity - Repeated Dose MSDS of HF from http://nanosioe.ee.ntu.edu.tw/semilab/MSDS/etching/wet%20etching/1.pdf
BOE ( Buffered Oxide Etchant )/BHF BOE ( Buffered Oxide Etchant )/BHF Wear protective gloves/ protective clothing/ eye protection/ face protection/ respiratory protection. Store and use in a well-ventilated place. Keep container tightly closed. If inhaled : Move person into fresh air. In case of skin contact : First treatment with calcium gluconate paste. Take off contaminated clothing and shoes immediately. Wash off with soap and plenty of water. Take victim immediately to hospital. In case of eye contact : Continue rinsing eyes during transport to hospital. Rinse thoroughly with plenty of water for at least 15 minutes. If swallowed : Do NOT induce vomiting. Rinse mouth with water. MSDS of HF from http://nanosioe.ee.ntu.edu.tw/semilab/MSDS/etching/wet%20etching/1.pdf
BOE etching BOE etching
Put the sample into BOE to etch Put the sample into BOE to etch SiO2 SiO2 for 2min for 2min
Rinse the sample by DI water Rinse the sample by DI water
Dry the sample with N Dry the sample with N2 2 spray gun spray gun
Observe the sample Observe the sample With etching Without etching
Measurement Measurement
Measure current Measure current V = +-1V no etching 1.0E-12(A)
Measure current Measure current V = +-1V etching 1.0E-6(A)
