Transient Simulation for Geometry Design and Doping Effects in Semiconductor Testing
Explore the transient simulation process for semiconductor testing involving geometry design and doping during CVD process. Understand the I-V characteristic curve physics, heavy ion generation, and space charge effects in the simulation. Visualize the key aspects and parameters involved in the simulation process to enhance semiconductor testing strategies.
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Presentation Transcript
Geometry Design for transient simulation testing later 4000 4000 500 ?? (x y z) 4 electrodes on front side, each 900 1900 ?? (? ?) One on back side, 3900 3900 ?? (? ?) Mesh refined at center 1
Doping During CVD process, Boron and Nitrogen are common impurities Boron Concentration Carrier Concentration (Boron Active Concentration ) Add 1010 Boron Active Concentration 2
I-V Characteristic Curve Physics { EffectiveIntrinsicDensity( OldSlotboom ) Mobility( -ConstantMobility DopingDep HighFieldSaturation( Eparallel ) Enormal ) Recombination( SRH( DopingDep ) Avalanche ) } 1 2 3 4 3
Transient Simulation - Physics Physics { EffectiveIntrinsicDensity( OldSlotboom ) Mobility( -ConstantMobility DopingDep HighFieldSaturation( Eparallel ) Enormal ) Recombination( SRH( DopingDep ) Avalanche ) HeavyIon( Direction= (0, 0, 1) Location = (@x0@, 0, -260) Time = 1e-9 Length = 520 Wt_hi = 1 LET_f = 5.767e-6 Gaussian PicoCoulomb ) } Simulation of electron hit From (0, 0, -260) to (0, 0, 260), penetrate the detector Wt_hi : radius same as IV simulation 1 ?? LET_f : linear energy transfer 5.767 10 6??/?? Gaussian : uses Gaussian distribution instead of exponential distribution PicoCoulomb : specifies the unit to be ?? and ??/?? for Wt_hi and LET_f respectively 4
0, 0, -260 2, 0, -260 5, 0, -260 8, 0, -260 5
HeavyIonGeneration x0=5um 6
SpaceCharge x0=5um 7
